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1. product profile 1.1 general description npn/pnp low v cesat breakthrough in small signal (biss) transistor pair in a sot457 (sc-74) surface mounted device (smd) plastic package. 1.2 features ? low collector-emitter sa turation voltage v cesat ? high collector curr ent capability: i c and i cm ? high collector cu rrent gain (h fe ) at high i c ? high efficiency due to less heat generation ? smaller required printed-circuit board (pcb) area than for conventional transistors 1.3 applications ? complementary mosfet driver ? half and full brid ge motor drivers ? dual low power switches (e.g. motors, fans) ? automotive applications 1.4 quick reference data [1] device mounted on an fr4 pcb, single-sided copper , tin-plated, mounting pad for collector 1 cm 2 . [2] pulse test: t p 300 s; 0.02. PBSS4160DPN 60 v, 1 a npn/pnp low v cesat (biss) transistor rev. 03 ? 11 december 2009 product data sheet table 1. quick reference data symbol parameter conditions min typ max unit tr1 (npn) v ceo collector-emitter voltage open base - - 60 v i c collector current (dc) [1] --1a i cm peak collector current single pulse; t p 1ms--2a r cesat collector-emitter saturation resistance i c =1a; i b =100ma [2] - 200 250 m tr2 (pnp) v ceo collector-emitter voltage open base - - ? 60 v i c collector current (dc) [1] -- ? 900 ma i cm peak collector current single pulse; t p 1ms - - ? 2a r cesat collector-emitter saturation resistance i c = ? 1a; i b = ? 100 ma [2] - 250 330 m
PBSS4160DPN_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 ? 11 december 2009 2 of 18 nxp semiconductors PBSS4160DPN 60 v, 1 a npn/pnp low v cesat (biss) transistor 2. pinning information 3. ordering information 4. marking 5. limiting values table 2. pinning pin description simplified outline symbol 1emitter tr1 2 base tr1 3 collector tr2 4emitter tr2 5 base tr2 6 collector tr1 13 2 4 5 6 sym019 2 1 3 5 6 tr1 tr2 4 table 3. ordering information type number package name description version PBSS4160DPN sc-74 plastic surface mounted package; 6 leads sot457 table 4. marking codes type number marking code PBSS4160DPN b4 table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit per transistor unless otherwise specified; for the pnp transistor with negative polarity v cbo collector-base voltage open emitter - 80 v v ceo collector-emitter voltage open base - 60 v v ebo emitter-base voltage open collector - 5 v i c collector current (dc) npn [1] -870ma [2] -1a pnp [1] -770ma [2] -900ma both [3] -1a i cm peak collector current single pulse; t p 1ms - 2 a i b base current (dc) - 300 ma i bm peak base current single pulse; t p 1ms - 1 a
PBSS4160DPN_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 ? 11 december 2009 3 of 18 nxp semiconductors PBSS4160DPN 60 v, 1 a npn/pnp low v cesat (biss) transistor [1] device mounted on an fr4 pcb, single-si ded copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided copper , tin-plated, mounting pad for collector 1 cm 2 . [3] device mounted on a ceramic pcb, al 2 o 3 , standard footprint. p tot total power dissipation t amb 25 c [1] -290mw [2] -370mw [3] -450mw per device p tot total power dissipation t amb 25 c [1] -420mw [2] -560mw [3] -700mw t j junction temperature - 150 c t amb ambient temperature ? 65 +150 c t stg storage temperature ? 65 +150 c (1) ceramic pcb, al 2 o 3 , standard footprint (2) fr4 pcb, mounting pad for collector 1 cm 2 (3) fr4 pcb, standard footprint fig 1. power derating curves table 5. limiting values ?continued in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit 006aaa493 t amb ( c) 0 160 120 40 80 400 200 600 800 p tot (mw) 0 (3) (2) (1)
PBSS4160DPN_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 ? 11 december 2009 4 of 18 nxp semiconductors PBSS4160DPN 60 v, 1 a npn/pnp low v cesat (biss) transistor 6. thermal characteristics [1] device mounted on an fr4 pcb, single-si ded copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided copper , tin-plated, mounting pad for collector 1 cm 2 . [3] device mounted on a ceramic pcb, al 2 o 3 , standard footprint. table 6. thermal characteristics symbol parameter conditions min typ max unit r th(j-a) thermal resistance from junction to ambient in free air [1] --431k/w [2] --338k/w [3] --278k/w r th(j-sp) thermal resistance from junction to solder point --105k/w fr4 pcb, standard footprint fig 2. transient thermal impedance from junction to ambient as a function of pulse time; typical values 006aaa494 10 ? 5 10 10 ? 2 10 ? 4 10 2 10 ? 1 t p (s) 10 ? 3 10 3 1 10 2 10 10 3 z th(j-a) (k/w) 1 0.10 0.05 0.02 0.01 0 = 1 0.75 0.50 0.33 0.20
PBSS4160DPN_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 ? 11 december 2009 5 of 18 nxp semiconductors PBSS4160DPN 60 v, 1 a npn/pnp low v cesat (biss) transistor fr4 pcb, mounting pad for collector 1 cm 2 fig 3. transient thermal impedance from junction to ambient as a function of pulse time; typical values ceramic pcb, al 2 o 3 , standard footprint fig 4. transient thermal impedance from junction to ambient as a function of pulse time; typical values 006aaa495 10 ? 5 10 10 ? 2 10 ? 4 10 2 10 ? 1 t p (s) 10 ? 3 10 3 1 10 2 10 10 3 z th(j-a) (k/w) 1 0.20 0.10 0.05 0.02 0.01 0 = 1 0.75 0.50 0.33 006aaa496 10 ? 5 10 10 ? 2 10 ? 4 10 2 10 ? 1 t p (s) 10 ? 3 10 3 1 10 2 10 10 3 z th(j-a) (k/w) 1 0.20 0.10 0.05 0.02 0.01 0 = 1 0.75 0.50 0.33
PBSS4160DPN_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 ? 11 december 2009 6 of 18 nxp semiconductors PBSS4160DPN 60 v, 1 a npn/pnp low v cesat (biss) transistor 7. characteristics table 7. characteristics t amb = 25 c unless otherwise specified. symbol parameter conditions min typ max unit per transistor unless otherwise specified; for the pnp transistor with negative polarity i cbo collector-base cut-off current v cb =60v; i e = 0 a - - 100 na v cb =60v; i e =0a; t j =150 c --50 a i ces collector-emitter cut-off current v ce =60v; v be = 0 v - - 100 na i ebo emitter-base cut-off current v eb =5v; i c = 0 a - - 100 na v besat base-emitter saturation voltage i c =1a; i b =50ma [1] - 0.95 1.1 v v beon base-emitter turn-on voltage v ce =5v; i c =1a [1] - 0.82 0.9 v tr1 (npn) h fe dc current gain v ce =5v; i c = 1 ma 250 500 - v ce =5v; i c =500ma [1] 200 420 - v ce =5v; i c =1a [1] 100 180 - v cesat collector-emitter saturation voltage i c = 100 ma; i b = 1 ma - 90 110 mv i c = 500 ma; i b =50ma - 115 140 mv i c =1a; i b =100ma [1] - 200 250 mv r cesat collector-emitter saturation resistance i c =1a; i b =100ma [1] - 200 250 m t d delay time i c =0.5a; i bon =25ma; i boff = ? 25 ma -11-ns t r rise time - 78 - ns t on turn-on time - 90 - ns t s storage time - 340 - ns t f fall time - 160 - ns t off turn-off time - 500 - ns f t transition frequency v ce =10v; i c =50ma; f=100mhz 150 220 - mhz c c collector capacitance v cb =10v; i e =i e =0a; f=1mhz - 5.5 10 pf tr2 (pnp) h fe dc current gain v ce = ? 5v; i c = ? 1 ma 200 350 - v ce = ? 5v; i c = ? 500 ma [1] 150 250 - v ce = ? 5v; i c = ? 1a [1] 100 160 -
PBSS4160DPN_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 ? 11 december 2009 7 of 18 nxp semiconductors PBSS4160DPN 60 v, 1 a npn/pnp low v cesat (biss) transistor [1] pulse test: t p 300 s; 0.02. v cesat collector-emitter saturation voltage i c = ? 100 ma; i b = ? 1ma - ? 110 ? 165 mv i c = ? 500 ma; i b = ? 50 ma - ? 120 ? 175 mv i c = ? 1a; i b = ? 100 ma [1] - ? 250 ? 330 mv r cesat collector-emitter saturation resistance i c = ? 1a; i b = ? 100 ma [1] - 250 330 m t d delay time i c = ? 0.5 a; i bon = ? 25 ma; i boff =25ma -11-ns t r rise time - 30 - ns t on turn-on time - 41 - ns t s storage time - 205 - ns t f fall time - 55 - ns t off turn-off time - 260 - ns f t transition frequency v ce = ? 10 v; i c = ? 50 ma; f=100mhz 150 185 - mhz c c collector capacitance v cb = ? 10 v; i e =i e =0a; f=1mhz - 9 15 pf table 7. characteristics ?continued t amb = 25 c unless otherwise specified. symbol parameter conditions min typ max unit
PBSS4160DPN_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 ? 11 december 2009 8 of 18 nxp semiconductors PBSS4160DPN 60 v, 1 a npn/pnp low v cesat (biss) transistor v ce =5v (1) t amb = 100 c (2) t amb = 25 c (3) t amb = ? 55 c v ce =5v (1) t amb = ? 55 c (2) t amb = 25 c (3) t amb = 100 c fig 5. tr1 (npn): dc current gain as a function of collector current; typical values fig 6. tr1 (npn): base-emitter voltage as a function of collector current; typical values i c /i b =20 (1) t amb = 100 c (2) t amb = 25 c (3) t amb = ? 55 c t amb = 25 c (1) i c /i b = 100 (2) i c /i b = 50 (3) i c /i b = 10 fig 7. tr1 (npn): collec tor-emitter saturation voltage as a function of collector current; typical values fig 8. tr1 (npn): collector-emitter saturation voltage as a function of collector current; typical values 006aaa505 i c (ma) 10 ? 1 10 4 10 3 110 2 10 400 200 600 800 h fe 0 (3) (2) (1) 006aaa506 0.6 0.8 0.4 1.0 1.2 v be (v) 0.2 i c (ma) 10 ? 1 10 4 10 3 110 2 10 (3) (2) (1) 006aaa513 i c (ma) 10 ? 1 10 4 10 3 110 2 10 10 ? 1 1 v cesat (v) 10 ? 2 (3) (2) (1) 006aaa514 10 ? 1 10 ? 2 1 v cesat (v) 10 ? 3 i c (ma) 10 ? 1 10 4 10 3 110 2 10 (3) (2) (1)
PBSS4160DPN_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 ? 11 december 2009 9 of 18 nxp semiconductors PBSS4160DPN 60 v, 1 a npn/pnp low v cesat (biss) transistor i c /i b =20 (1) t amb = ? 55 c (2) t amb = 25 c (3) t amb = 100 c i c /i b =20 (1) t amb = 100 c (2) t amb = 25 c (3) t amb = ? 55 c fig 9. tr1 (npn): base-emitter saturation voltage as a function of collector current; typical values fig 10. tr1 (npn): collector-emitter saturation resistance as a function of collector current; typical values t amb = 25 ct amb = 25 c (1) i c /i b = 100 (2) i c /i b = 50 (3) i c /i b = 10 fig 11. tr1 (npn): collector current as a function of collector-emitter voltage; typical values fig 12. tr1 (npn): collector-emitter saturation resistance as a function of collector current; typical values 006aaa509 0.6 0.8 0.4 1.0 1.2 v besat (v) 0.2 i c (ma) 10 ? 1 10 4 10 3 110 2 10 (3) (2) (1) 006aaa515 i c (ma) 10 ? 1 10 4 10 3 110 2 10 1 10 10 2 10 3 r cesat ( ) 10 ? 1 (3) (2) (1) 006aaa511 v ce (v) 05 3 12 4 0.8 1.2 0.4 1.6 2.0 i c (a) 0 i b (ma) = 65.0 13.0 6.5 58.5 52.0 26.0 39.0 45.5 32.5 19.5 006aaa516 i c (ma) 10 ? 1 10 4 10 3 110 2 10 1 10 10 2 10 3 r cesat ( ) 10 ? 1 (3) (2) (1)
PBSS4160DPN_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 ? 11 december 2009 10 of 18 nxp semiconductors PBSS4160DPN 60 v, 1 a npn/pnp low v cesat (biss) transistor v ce = ? 5v (1) t amb = 100 c (2) t amb = 25 c (3) t amb = ? 55 c v ce = ? 5v (1) t amb = ? 55 c (2) t amb = 25 c (3) t amb = 100 c fig 13. tr2 (pnp): dc current gain as a function of collector current; typical values fig 14. tr2 (pnp): base-emitter voltage as a function of collector current; typical values i c /i b =20 (1) t amb = 100 c (2) t amb = 25 c (3) t amb = ? 55 c t amb = 25 c (1) i c /i b = 100 (2) i c /i b = 50 (3) i c /i b = 10 fig 15. tr2 (pnp): collec tor-emitter saturation voltage as a function of collector current; typical values fig 16. tr2 (pnp): collecto r-emitter sa turation voltage as a function of collector current; typical values 006aaa474 200 400 600 h fe 0 i c (ma) ? 10 ? 1 ? 10 4 ? 10 3 ? 1 ? 10 2 ? 10 (1) (2) (3) 006aaa476 ? 0.6 ? 0.4 ? 0.8 ? 1.0 v be (v) ? 0.2 i c (ma) ? 10 ? 1 ? 10 4 ? 10 3 ? 1 ? 10 2 ? 10 (1) (2) (3) 006aaa489 i c (ma) ? 10 ? 1 ? 10 4 ? 10 3 ? 1 ? 10 2 ? 10 ? 10 ? 1 ? 1 v cesat (v) ? 10 ? 2 (3) (2) (1) 006aaa490 i c (ma) ? 10 ? 1 ? 10 4 ? 10 3 ? 1 ? 10 2 ? 10 ? 10 ? 1 ? 1 v cesat (v) ? 10 ? 2 (3) (2) (1)
PBSS4160DPN_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 ? 11 december 2009 11 of 18 nxp semiconductors PBSS4160DPN 60 v, 1 a npn/pnp low v cesat (biss) transistor i c /i b =20 (1) t amb = ? 55 c (2) t amb = 25 c (3) t amb = 100 c i c /i b =20 (1) t amb = 100 c (2) t amb = 25 c (3) t amb = ? 55 c fig 17. tr2 (pnp): base-emitter saturation voltage as a function of collector current; typical values fig 18. tr2 (pnp): collecto r-emitter sa turation resistance as a function of collector current; typical values t amb = 25 ct amb = 25 c (1) i c /i b = 100 (2) i c /i b = 50 (3) i c /i b = 10 fig 19. tr2 (pnp): collector current as a function of collector-emitter voltage; typical values fig 20. tr2 (pnp): collecto r-emitter sa turation resistance as a function of collector current; typical values 006aaa477 ? 0.5 ? 0.7 ? 0.3 ? 0.9 ? 1.1 v besat (v) ? 0.1 i c (ma) ? 10 ? 1 ? 10 4 ? 10 3 ? 1 ? 10 2 ? 10 (1) (2) (3) 006aaa491 i c (ma) ? 10 ? 1 ? 10 4 ? 10 3 ? 1 ? 10 2 ? 10 1 10 10 2 10 3 r cesat ( ) 10 ? 1 (3) (2) (1) 006aaa478 v ce (v) 0 ? 5 ? 3 ? 1 ? 2 ? 4 ? 0.8 ? 1.2 ? 0.4 ? 1.6 ? 2.0 i c (a) 0.0 i b (ma) = ? 35.0 ? 31.5 ? 28.0 ? 24.5 ? 21.0 ? 17.5 ? 14.0 ? 10.5 ? 7.0 ? 3.5 006aaa492 i c (ma) ? 10 ? 1 ? 10 4 ? 10 3 ? 1 ? 10 2 ? 10 1 10 10 2 10 3 r cesat ( ) 10 ? 1 (3) (2) (1)
PBSS4160DPN_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 ? 11 december 2009 12 of 18 nxp semiconductors PBSS4160DPN 60 v, 1 a npn/pnp low v cesat (biss) transistor 8. test information fig 21. tr1 (npn): biss transist or switching time definition i c = 0.5 a; i bon =25ma; i boff = ? 25 ma; r1 = open; r2 = 100 ; r b = 300 ; r c = 20 fig 22. tr1 (npn): test circuit for switching times 006aaa003 i bon (100 %) i b input pulse (idealized waveform) i boff 90 % 10 % i c (100 %) i c t d t on 90 % 10 % t r output pulse (idealized waveform) t f t t s t off r c r2 r1 dut mlb826 v o r b (probe) 450 (probe) 450 oscilloscope oscilloscope v bb v i v cc
PBSS4160DPN_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 ? 11 december 2009 13 of 18 nxp semiconductors PBSS4160DPN 60 v, 1 a npn/pnp low v cesat (biss) transistor fig 23. tr2 (pnp): biss transist or switching time definition i c = ? 0.5 a; i bon = ? 25 ma; i boff = 25 ma; r1 = open; r2 = 100 ; r b = 300 ; r c = 20 fig 24. tr2 (pnp): test circuit for switching times 006aaa266 ? i bon (100 %) ? i b input pulse (idealized waveform) ? i boff 90 % 10 % ? i c (100 %) ? i c t d t on 90 % 10 % t r output pulse (idealized waveform) t f t t s t off r c r2 r1 dut mgd624 v o r b (probe) 450 (probe) 450 oscilloscope oscilloscope v bb v i v cc
PBSS4160DPN_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 ? 11 december 2009 14 of 18 nxp semiconductors PBSS4160DPN 60 v, 1 a npn/pnp low v cesat (biss) transistor 9. package outline 10. packing information [1] for further information and the avai lability of packing methods, see section 14 . [2] t1: normal taping [3] t2: reverse taping fig 25. package outline sot457 (sc-74) 04-11-08 dimensions in mm 3.0 2.5 1.7 1.3 3.1 2.7 pin 1 index 1.9 0.26 0.10 0.40 0.25 0.95 1.1 0.9 0.6 0.2 13 2 4 5 6 table 8. packing methods the indicated -xxx are the last thre e digits of the 12nc ordering code. [1] type number package description packing quantity 3000 10000 PBSS4160DPN sot457 4 mm pitch, 8 mm tape and reel; t1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; t2 [3] -125 -165
PBSS4160DPN_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 ? 11 december 2009 15 of 18 nxp semiconductors PBSS4160DPN 60 v, 1 a npn/pnp low v cesat (biss) transistor 11. soldering dimensions in mm fig 26. reflow soldering footprint dimensions in mm fig 27. wave soldering footprint solder lands solder resist occupied area solder paste 0.95 2.825 0.45 0.55 1.60 1.95 3.45 1.70 3.10 3.20 3.30 msc422 1.40 4.30 5.30 0.45 msc423 1.45 4.45 5.05 solder lands solder resist occupied area
PBSS4160DPN_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 ? 11 december 2009 16 of 18 nxp semiconductors PBSS4160DPN 60 v, 1 a npn/pnp low v cesat (biss) transistor 12. revision history table 9. revision history document id release date data sheet status change notice supersedes PBSS4160DPN_3 20091211 product data sheet - PBSS4160DPN_2 modifications: ? this data sheet was changed to reflect the new company name nxp semiconductors, including new legal definitions and disclaimers. no changes were made to the technical content. ? figure 1 , 7 and 15 : updated PBSS4160DPN_2 20050714 product data sheet - PBSS4160DPN_1 PBSS4160DPN_1 20040603 objective data sheet - -
PBSS4160DPN_3 ? nxp b.v. 2009. all rights reserved. product data sheet rev. 03 ? 11 december 2009 17 of 18 nxp semiconductors PBSS4160DPN 60 v, 1 a npn/pnp low v cesat (biss) transistor 13. legal information 13.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term ?short data sheet? is explained in section ?definitions?. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple device s. the latest product status information is available on the internet at url http://www.nxp.com . 13.2 definitions draft ? the document is a draft versi on only. the content is still under internal review and subject to formal approval, which may result in modifications or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall hav e no liability for the consequences of use of such information. short data sheet ? a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request vi a the local nxp semiconductors sales office. in case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail. 13.3 disclaimers general ? information in this document is believed to be accurate and reliable. however, nxp semiconductors d oes not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes ? nxp semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use ? nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer?s own risk. applications ? applications that are described herein for any of these products are for illustrative purpos es only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. limiting values ? stress above one or more limiting values (as defined in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale ? nxp semiconductors products are sold subject to the general terms and condit ions of commercial sale, as published at http://www.nxp.com/profile/terms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writ ing by nxp semiconductors. in case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license ? nothing in this document may be interpreted or construed as an offer to sell products t hat is open for acceptance or the grant, conveyance or implication of any lic ense under any copyrights, patents or other industrial or intellectual property rights. export control ? this document as well as the item(s) described herein may be subject to export control regulations. export might require a prior authorization from national authorities. quick reference data ? the quick reference data is an extract of the product data given in the limiting values and characteristics sections of this document, and as such is not comp lete, exhaustive or legally binding. 13.4 trademarks notice: all referenced brands, produc t names, service names and trademarks are the property of their respective owners. 14. contact information for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com document status [1] [2] product status [3] definition objective [short] data sheet development this document contains data from the objecti ve specification for product development. preliminary [short] data sheet qualification this document contains data from the preliminary specification. product [short] data sheet production this docu ment contains the product specification.
nxp semiconductors PBSS4160DPN 60 v, 1 a npn/pnp low v cesat (biss) transistor ? nxp b.v. 2009. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please se nd an email to: salesaddresses@nxp.com date of release: 11 december 2009 document identifier: PBSS4160DPN_3 please be aware that important notices concerning this document and the product(s) described herein, have been included in section ?legal information?. 15. contents 1 product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 test information . . . . . . . . . . . . . . . . . . . . . . . . 12 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . 14 10 packing information . . . . . . . . . . . . . . . . . . . . 14 11 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . 16 13 legal information. . . . . . . . . . . . . . . . . . . . . . . 17 13.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 17 13.2 definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 13.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 13.4 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17 14 contact information. . . . . . . . . . . . . . . . . . . . . 17 15 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

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